IXFN56N90P Datasheet (IXYS Corporation)

IXFN56N90P - Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN56N90P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque

IXFN56N90P Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Low RDS(on) and QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode

IXFN56N90P Datasheet - IXYS Corporation

IXFN56N90P - Power MOSFET

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