IXFR12N100F - HiPerFET Power MOSFETs

Features

z RF capable MOSFETs z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier.

IXYS Corporation

Datasheet Details

Part number	IXFR12N100F
Manufacturer	IXYS Corporation
File Size	91.92 KB
Description	HiPerFET Power MOSFETs
Datasheet	IXFR12N100F Datasheet
Additional preview pages of the IXFR12N100F datasheet.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.6 mm (0.063 in.

Published: Sep 23, 2005 |