IXFT50N20
Overview
- Internationalstandardpackages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance - easy to drive and to protect
- Fast intrinsic Rectifier
Related Datasheets
- AP9563GH — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
- FCPF360N65S3R0L — onsemi — N-Channel MOSFET
- A2SHB — HAOHAI — N-Channel MOSFET