IXFT50N20 Key Features
- Internationalstandardpackages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
- Part: IXFT50N20
- Description: Power MOSFET
- Manufacturer: IXYS
- Size: 678.74 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFT50N60P3 | Power MOSFET |
| IXFT52N30Q | Power MOSFET |
| IXFT52N50P2 | N-Channel Power MOSFET |
| IXFT58N20 | Power MOSFET |
| IXFT58N20Q | HiPerFET Power MOSFETs |