z z z 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m.

HiPerFET Power MOSFETs Q-Class

IXFT60N20

IXFT60N20F

IXFT60N25Q

IXFT60N50P3

IXFT60N65X2HV

IXFT68N20

IXFT6N100F

IXFT10N100

IXFT120N15P

IXFT12N100

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