IXFT66N20Q Datasheet, Q-Class, IXYS Corporation

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IXFT66N20Q Features and benefits

z z z 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m.

IXFT66N20Q Description

HiPerFET Power MOSFETs Q-Class

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IXYS Corporation

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