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IXYS Corporation

IXFT80N10 Datasheet Preview

IXFT80N10 Datasheet

(IXFH80N10 / IXFT80N10) HiPerFET Power MOSFETs

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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N10
IXFT 80N10
VDSS = 100 V
ID25 = 80 A
RDS(on) = 12.5 m
trr 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
L(RMS)
I
DM
IAR
EAR
EAS
dv/dt
P
D
T
J
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
T
C
= 25°C
Lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
T
J
150°C,
R
G
=
2
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
100
100
±20
±30
80
75
320
80
50
2.5
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
300
-55 to +150
150
-55 to +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
100
2.0
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
V
4.0 V
±100 nA
50 µA
1 mA
12.5 m
TO-247 AD (IXFH)
(TAB)
TO-268 ( IXFT) Case Style
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l International standard packages
l Low RDS (on)
l Rated for unclamped Inductive load
switching (UIS)
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 2000 IXYS All rights reserved
DataSheet4 U .com
98739 (8/00)




IXYS Corporation

IXFT80N10 Datasheet Preview

IXFT80N10 Datasheet

(IXFH80N10 / IXFT80N10) HiPerFET Power MOSFETs

No Preview Available !

www.DataSheet4U.com
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
35 55
4800
1460
490
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2.5 (External),
41
63
90
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
180
38
65
nC
nC
nC
(TO-247)
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
80 A
320 A
1.5 V
trr 200 ns
QRM
IF = 25A, -di/dt = 100 A/µs, VR = 50 V
0.5 µC
IRM 6 A
IXFH 80N10
IXFT 80N10
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
P
Q
R
S
Millimeter
Min. Max.
4.7 5.3
2.2 2.54
2.2 2.6
1.0 1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
DataSheet4 U .com


Part Number IXFT80N10
Description (IXFH80N10 / IXFT80N10) HiPerFET Power MOSFETs
Maker IXYS Corporation
Total Page 2 Pages
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