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IXYS Corporation

IXFV16N80PS Datasheet Preview

IXFV16N80PS Datasheet

PolarHV Power MOSFET

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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
VDSS = 800
ID25 = 16
RDS(on) 600
trr 250
V
A
mΩ
ns
Symbol
V
DSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
TSOLD
Md
F
C
Weight
Test Conditions
T
J
=
25°C
to
150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
=
25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
T
J
150°C,
R
G
=
5
Ω
T
C
=
25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
TO-247 (IXFH)
Maximum Ratings
800 V
800 V
±30 V
±40 V
16 A
40 A
G
DS
TO-268 (IXFT)
8A
30 mJ
G
S
1.0 J
PLUS220 (IXFV)
10 V/ns
D (TAB)
460 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 ° C
260 ° C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
6.0 g
5.0 g
4.0 g
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
800 V
V
GS(th)
V = V , I = 4 mA
DS GS D
3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t 300 μs, duty cycle d 2 %
600 mΩ
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
www©.D20a0t6aISXhYSeeAtll4riUght.snreesterved
DS99599E(07/06)




IXYS Corporation

IXFV16N80PS Datasheet Preview

IXFV16N80PS Datasheet

PolarHV Power MOSFET

No Preview Available !

IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Symbol
gfs
Ciss
C
oss
C
rss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
V = 0 V, V = 25 V, f = 1 MHz
GS DS
9 16
4600
330
23
S
pF
pF
pF
VGS = 10 V, VDS = VDSS, ID = 0.5 ID25
RG = 5 Ω (External)
27 ns
32 ns
75 ns
29 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
71 nC
21 nC
23 nC
(TO-247)
0.27 °C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V, pulse test
trr IF = 25A, -di/dt = 100 A/μs
IRM VR = 100V; VGS = 0 V
Q
RM
16 A
48 A
1.5 V
150 250 ns
7A
0.7 μC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXFV16N80PS
Description PolarHV Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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