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IXFV20N80P - PolarHV HiPerFET Power MOSFET

Download the IXFV20N80P datasheet PDF. This datasheet also covers the IXFH20N80P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXFH20N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 800 800 ± 30 ± 40 20 50 10 30 1.0 10 500 -55 ...

+150 150 -55 ...

+150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFH) (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D S D (TAB) Maximum lead temperature for soldering Plastic case for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 types 300 260 PLUS220 SMD(IXFV..S) 1.13/10 Nm/lb.in.

Key Features

  • D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID =.

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