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IXYS Corporation

IXFV20N80P Datasheet Preview

IXFV20N80P Datasheet

PolarHV HiPerFET Power MOSFET

No Preview Available !

PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 20N80P
IXFT 20N80P
IXFV 20N80P
IXFV 20N80PS
VDSS =
ID25 =
RDS(on)
trr
800 V
20 A
520 m
250 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
Maximum lead temperature for soldering
Plastic case for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 types
Maximum Ratings
800 V
800 V
TO-247 (IXFH)
± 30
± 40
20
50
10
30
1.0
V
V
TO-268 (IXFT)
A
A
A
G
mJ S
J
10 V/ns PLUS220 (IXFV)
(TAB)
D (TAB)
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
1..65 / 2.5..15
6
5.5
4
N/lb
g
g
g
G DS
D (TAB)
PLUS220 SMD(IXFV..S)
G
S
D (TAB)
G = Gate D = Drain
S = Source Tab = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ± 30 VDC, VDS = 0
± 200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 10 A
Pulse test, t 300 µs, duty cycle d 2 %
520 m
Features
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
DS99511E(03/06)
www.©D2a00t6aSIXhYeSeAtl4l rUigh.tns eretserved




IXYS Corporation

IXFV20N80P Datasheet Preview

IXFV20N80P Datasheet

PolarHV HiPerFET Power MOSFET

No Preview Available !

Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
IXFH 20N80P IXFT 20N80P
IXFV 20N80P IXFV 20N80PS
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 10 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
RG = 2 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
(TO-247, PLUS220)
14 23
S
4685
356
26
pF
pF
pF
30 ns
24 ns
85 ns
24 ns
86 nC
27 nC
24 nC
0.25 °C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d2 %
20 A
50 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM VR = 100V; VGS = 0 V
IRM
250 ns
0.8 µC
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478B2


Part Number IXFV20N80P
Description PolarHV HiPerFET Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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