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IXYS Corporation

IXFX50N50 Datasheet Preview

IXFX50N50 Datasheet

Power MOSFETs

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HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFX 50N50
IXFX 55N50
VDSS
ID25
500 V 50 A
500 V 55 A
t
rr
250
ns
RDS(on)
100 m
80 m
Preliminary data sheet
Symbol
V
DSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
50N50
55N50
50N50
55N50
50N50
55N50
500 V
500 V
±20 V
±30 V
50 A
55 A
200 A
220 A
50 A
55 A
60 mJ
3J
5 V/ns
520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
V
DSS
V
GS(th)
IGSS
V = 0 V, I = 1mA
GS D
V = V , I = 8mA
DS GS D
VGS = ±20 V, VDS = 0
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.5 V
±200 nA
IDSS
RDS(on)
V DS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
TJ = 25°C
TJ = 125°C
50N50
55N50
25 µA
2 mA
100 m
80 m
PLUS 247TM
(IXFX)
G
D
D (TAB)
Features
l International standard package
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
l Temperature and lighting controls
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98507D (04/02)




IXYS Corporation

IXFX50N50 Datasheet Preview

IXFX50N50 Datasheet

Power MOSFETs

No Preview Available !

IXFX 50N50
IXFX 55N50
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25 Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 (External),
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
45 S
9400
1280
460
pF
pF
pF
45 ns
60 ns
120 ns
45 ns
330 nC
55 nC
155 nC
0.22 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
55N50
50N50
55 A
50 A
ISM Repetitive;
55N50
pulse width limited by TJM
50N50
220 A
200 A
V
SD
IF = IS, VGS = 0 V
Note 1
1.5 V
t
rr
250 ns
QRM 1.0 µ C
IRM IF =25 A,-di/dt = 100 A/µs, VR = 100 V 10 A
PLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
Note: 1.Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number IXFX50N50
Description Power MOSFETs
Maker IXYS Corporation
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IXFX50N50 Datasheet PDF






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