Overview: HiPerFETTM Power MOSFETs
Single Die MOSFET IXFX 50N50 IXFX 55N50 VDSS ID25 500 V 50 A 500 V 55 A t rr ≤ 250 ns RDS(on)
100 mΩ 80 mΩ Preliminary data sheet Symbol
V DSS
VDGR V
GS
VGSM ID25
IDM
IAR
EAR EAS dv/dt
PD TJ T
JM
Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque 50N50 55N50 50N50 55N50 50N50 55N50 500 V 500 V
±20 V ±30 V
50 A 55 A 200 A 220 A 50 A 55 A
60 mJ
3J
5 V/ns 520 W -55 ... +150
150 -55 ... +150 °C
°C °C 300 °C 1.13/10 Nm/lb.in. 6g Symbol Test Conditions V DSS
V GS(th)
IGSS V = 0 V, I = 1mA GS D
V = V , I = 8mA DS GS D VGS = ±20 V, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.5 V
±200 nA IDSS RDS(on) V DS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.
