IXFX55N50 Datasheet | IXYS

Features l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density © 2002 IXYS All rights reserved 98507D (04/02) IXFX 50N50 IXFX 55N50 Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 ID25 Note 1 VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 Ω (External), VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 45 S 9400 1280 460 p F p F p F 45 ns 60 ns 120 ns 45 ns 330 n C 55 n C 155 n C 0.22 K/W K/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V 55N50 50N50 55 A 50 A ISM Repetitive; 55N50 pulse width limited by TJM 50N50 220 A 200 A V SD IF = IS, VGS = 0 V Note 1 1.5 V t rr 250...