IXGA8N100 igbt equivalent, igbt.
* International standard packages JEDEC TO-220AB and TO-263AA
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity Ap.
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th).
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