* International standard packages JEDEC TO-220AB and TO-263AA
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity Applications 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
IXGA8N100 Datasheet (102.05 KB)
IXGA8N100
IXYS Corporation
102.05 KB
Igbt.
IGBT Preliminary data sheet IXGA 8N100 IXGP 8N100 VCES = 1000 V = 16 A IC25 VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) .
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