IXGH12N60B Description
+150 V V V V A A A A W °C °C °C TO-247 C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH12N60B Key Features
- Moderate frequency IGBT
- New generation HDMOSTM process
- International standard package JEDEC TO-247
- High peak current handling capability