IXGH12N60C Overview
+150 °C °C °C 0.45/4 Nm/lb.in. 6g 300 ° C TO-247 G C E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH12N60C Key Features
- Very high frequency IGBT
- New generation HDMOSTM process
- Internationalstandardpackage
- High peak current handling capability
