Datasheet Summary
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HiPerFASTTM IGBT
IXGH 12N60B
Preliminary data
VDSS = 600 ID25 = 24 VCE(SAT) = 2.1 tfi(typ) = 120
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 300 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features
- Moderate frequency IGBT
- New generation HDMOSTM process
-...
