IXGH22N50BS Description
Preliminary data HiP erF ASTTM IGBT HiPerF erFAST IXGH22N50B IXGH22N50BS VCES IC(25) VCE(sat)typ tfi(typ) TO-247 SMD = 500 V = 44 A = 2.1 V = 55 ns .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 1.13/10 TO-247 AD TO-247 SMD 6 4 W °C °C °C °C Nm/lb.in.
IXGH22N50BS Key Features
- International standard packages
- High frequency IGBT
- High current handling capability
- HiPerFAST HDMOS process
- MOS Gate turn-on
- drive simplicity