Full PDF Text Transcription for IXGH22N50BU1 (Reference)
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Preliminary data HiP erF AST HiPerF erFAST with Diode Combi P ac k Pac ack TM IGBT IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S VCES IC(25) VCE(sat)typ tfi(typ...
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H22N50BU1 IXGH22N50B U1S IXGH22N50BU1S VCES IC(25) VCE(sat)typ tfi(typ) TO-247 SMD* = 500 V = 44 A = 2.1 V = 55 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 44 22 88 ICM = 44 @ 0.8 VCES 150 -55 ... +150 150 -55 ...
IXGH22N50BU1 Datasheet
