IXGH22N50BS Datasheet | IXYS

Preliminary data Hi P er F ASTTM IGBT Hi Per F er FAST IXGH22N50B IXGH22N50BS VCES IC(25) VCE(sat)typ tfi(typ) TO-247 SMD- = 500 V = 44 A = 2.1 V = 55 ns .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 44 22 88 ICM = 44 A @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 AD TO-247 SMD 6 4 W °C °C °C °C Nm/lb.in. g g V V V V A A A C (TAB) TO-247 AD C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features - International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) - High frequency IGBT - High current handling capability - Hi Per FAST HDMOS process - MOS Gate turn-on TM TM - drive simplicity Applications - Uninterruptible power supplies (UPS) - Switched-mode and resonant-mode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25°C TJ = 125°C ±100 2.1 2.5 V V µA m A n A V power supplies BVCES VGE(th) ICES IGES VCE(sat) IC...