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IXGH42N30C3 Datasheet GenX3 300V IGBT

Manufacturer: IXYS (now Littelfuse)

Download the IXGH42N30C3 datasheet PDF. This datasheet also includes the IXGA42N30C3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXGA42N30C3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

GenX3TM 300V IGBT IXGA42N30C3 High Speed PT IGBTs for 50-150kHz switching IXGH42N30C3 IXGP42N30C3 VCES IC110 VCE(sat) tfi typ = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum Ratings 300 300 ±20 ±30 42 250 42 250 ICM = 84 223 -55 ...

+150 150 -55 ...

+150 V V V V A A A mJ A W °C °C °C °C °C Nm/lb.in.

Key Features

  • z z z z Optimized for low switching losses Square RBSOA High current handling capability International standard packages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 ±100 1.54 1.54 1.85 TJ = 125°C V V μA μA nA V V Advantages z z High power density Low gate drive requirement VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 42A, VGE = 1.

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