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IXYS Corporation

IXGH60N60C3 Datasheet Preview

IXGH60N60C3 Datasheet

High Speed PT IGBT

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GenX3TM 600V
IGBT
High Speed PT IGBT for
40-100kHz Switching
IXGH60N60C3
VCES =
IC110 =
V CE(sat)
tfi (typ) =
600V
60A
2.5V
50ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
600
±20
±30
V
V
V
V
75
60
360
40
400
ICM = 125
VCE VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
A
A
A
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC = 40A, VGE = 15V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
50 μA
1 mA
±100 nA
2.2 2.5 V
1.7 V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Avalanche rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS99928B(01/10)




IXYS Corporation

IXGH60N60C3 Datasheet Preview

IXGH60N60C3 Datasheet

High Speed PT IGBT

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 480V, RG = 3Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 480V, RG = 3Ω
Note 2
RthJC
RthCK
Characteristic Values
Min.
Typ.
Max.
23 38
S
2810
210
80
pF
pF
pF
115 nC
22 nC
43 nC
21 ns
33 ns
0.80 mJ
70 110 ns
50 ns
0.45 0.80 mJ
21 ns
33 ns
1.25 mJ
112 ns
86 ns
0.80 mJ
0.33 °C/W
0.21 °C/W
IXGH60N60C3
TO-247 (IXGH) Outline
123
P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitted Tab - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGH60N60C3
Description High Speed PT IGBT
Maker IXYS Corporation
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IXGH60N60C3 Datasheet PDF





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