Datasheet Summary
High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat) tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
BD1
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g
TO-3P (IXGQ)
(TAB)
G = Gate E = Emitter Features z z
C = Collector TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. 300 6 z
Maximum lead temperature for...