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IXGQ20N120BD1 - High Voltage IGBT

Download the IXGQ20N120BD1 datasheet PDF. This datasheet also covers the IXGQ20N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z C = Collector TAB = Collector Mounting torque 1.13/10 Nm/lb. in. 300 6 z Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s www. DataSheet4U. com z Weight International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGQ20N120B_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1 VCES IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns BD1 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g TO-3P (IXGQ) G C E (TAB) G = Gate E = Emitter Features z z C = Collector TAB = Collector Mounting torque 1.13/10 Nm/lb.in. 300 6 z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.