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IXYS Corporation

IXGQ90N33TC Datasheet Preview

IXGQ90N33TC Datasheet

IGBTs

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Trench Gate,
High Speed,
IGBTs
For PDP Applications
IXGA90N33TC
IXGQ90N33TC
IXGQ90N33TCD1
IVCCPES
VCE(sat)
=
=
330V
360A
1.80V
90N33TC 90N33TCD1
Symbol
VCES
VGES
VGEM
IC25
IC(RMS)
IICC1P10
ICP
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TLeC=ad25C°uCrr(eCnht iLpimCiat pability)
TTCC
= 110°C
< 150°C, tp < 10μs
TC < 150°C, tp < 10μs, Duty cycle < 1%
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P)
TO-263
TO-3P
Maximum Ratings
330
±20
±30
90
75
38
60
360
V
V
V
A
A
A
A
A
200
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
VGE = 15V, IC = 20A, Note 1
IC = 45A
TJ = 125°C
IC = 90A
TJ = 125°C
Characteristic Values
Min. Typ. Max.
330 V
3.0 5.0 V
1 μA
200 μA
±200 nA
1.54
1.54
1.82
1.95
1.40 V
1.80 V
V
V
V
TO-263 AA (IXGA)
G
E
C (Tab)
TO-3P (IXGQ)
G
C
E
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
Low VCE(sat)
- for minimum On-State Conduction
Losses
Fast Switching
Applications
PDP Screen Drivers
© 2011 IXYS CORPORATION, All Rights Reserved
DS99754B (07/11)




IXYS Corporation

IXGQ90N33TC Datasheet Preview

IXGQ90N33TC Datasheet

IGBTs

No Preview Available !

IXGQ90N33TCD1 IXGA90N33TC
IXGQ90N33TC
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
gfS
Cies
Coes
Cres
IC = 45A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
40 65
2320
180
21
S
pF
pF
pF
Qg
Qge IC = 45A, VGE = 15V, VCE = 0.5 VCES
69 nC
15 nC
Qgc 13 nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 45A, VGE = 15V
VCE = 240V, RG = 5Ω
13
30
38
49
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = 45A, VGE = 15V
VCE = 240V, RG = 5Ω
13
28
50
74
ns
ns
ns
ns
RthJC
RthCS
TO-3P
0.62 °C/W
0.21 °C/W
TO-263 Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 20A, VGE = 0V, Note 1
RthJC
Characteristic Values
Min.
Typ.
Max
2.0 V
2.5 °C/W
TO-3P Outline
Note:
1. Pulse test, t 300μs, duty cycle, d 2%.
1 = Gate
3 = Emitter
2,4 = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGQ90N33TC
Description IGBTs
Maker IXYS Corporation
Total Page 5 Pages
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