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IXGQ90N33TCD1, IXGA90N33TC IGBTs

IXGQ90N33TCD1 Description

Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1.

IXGQ90N33TCD1 Features

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1.82 1.95 Characteristic Values Min. Typ. Max. 330 3

IXGQ90N33TCD1 Applications

* IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC= 25°C (Chip Capability) Lead Current Limit TC = 110°C TC

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXGQ90N33TCD1, IXGA90N33TC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXGQ90N33TCD1, IXGA90N33TC
Manufacturer
IXYS Corporation
File Size
138.81 KB
Datasheet
IXGA90N33TC-IXYSCorporation.pdf
Description
IGBTs
Note
This datasheet PDF includes multiple part numbers: IXGQ90N33TCD1, IXGA90N33TC.
Please refer to the document for exact specifications by model.

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IGBTs IXYS Corporation
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