IXGT15N120BD1 - Low VCE(sat) IGBT

Datasheet Summary

Features

International standard packages: JEDEC TO-247AD & TO-268.
IGBT and anti-parallel FRED in one package.
MOS Gate turn-on - drive simplicity.
Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM.

IXYS Corporation

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Datasheet Details

Part number	IXGT15N120BD1
Manufacturer	IXYS Corporation
File Size	88.14 KB
Description	Low VCE(sat) IGBT
Datasheet	IXGT15N120BD1 Datasheet
Additional preview pages of the IXGT15N120BD1 datasheet.

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Full PDF Text Transcription

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Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V 30 A Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @0.8 VCES 150 -55 ... +150 150 -55 ...

Published: Oct 28, 2008 |