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IXGT15N120C - IGBT Lightspeed Series

Key Features

  • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD.
  • Low switching losses.
  • MOS Gate turn-on - drive simplicity.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Lightspeed Series Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C IXGH 15N120C IXGT 15N120C VCES = 1200 V = 30 A IC25 VCE(sat) = 3.8 V tfi(typ) = 115 ns Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A W °C °C °C °C °C TO-268 (IXGT) G E (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead temperature for soldering 1.6 mm (0.062 in.