IXGT15N120B2D1 - IGBT

This page provides the datasheet information for the IXGT15N120B2D1, a member of the IXGH15N120B2D1 IGBT family.

Product Overview

IXYS

Part number	IXGT15N120B2D1
Manufacturer	IXYS
File Size	116.94 KB
Description	IGBT
Datasheet	IXGT15N120B2D1 Datasheet
Additional preview pages of the IXGT15N120B2D1 datasheet.

z International standard packages: JEDEC TO-247AD & TO-268 z IGBT and anti-parallel FRED in one package z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV CES VGE(th) I C = 250 μA, V GE = 0 V IC = 250 μA, VCE = VGE ICES VCE = VCES V =0V GE I GES V CE = 0 V, V GE = ±20 V VCE(sat) IC = ICE90, VGE = 15 Characteristic Values Min. Typ. Max. 1200 2.5 V.

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Published: Feb 11, 2025 |