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HiPerFASTTM IGBT with Diode
Combi Pack
IXGH 30N60BU1 IXGT 30N60BU1
VCES IC25 VCE(sat) tfi
TO-268 (IXGT)
= 600 V = 60 A = 1.8 V = 100 ns
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Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-268 TO-247 AD 4 6 V V V V A A A A
G = Gate, E = Emitter,
G E C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
W °C °C °C °C Nm/lb.in.
IXGT30N60BU1 Datasheet
