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IXGT60N60B2 - IGBT

Download the IXGT60N60B2 datasheet PDF. This datasheet also covers the IXGH60N60B2 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb. in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH60N60B2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT60N60 Ultra-Low VCE(sat) IGBT
IXGT60N60C2 High Speed IGBT
IXGT6N170A High Voltage IGBT
IXGT15N120B HiPerFAST IGBT
IXGT15N120BD1 Low VCE(sat) IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 60 300 ICM = 150 500 -55 ... +150 150 -55 ...
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