IXGT60N60 Description
Ultra-Low VCE(sat) IGBT .. +150 V V V V A A A A TO-247 AD (IXGH) G C E TO-268 (IXGT) G E (TAB) TO-264 (IXGK) W °C °C °C °C g g g G = Gate, E = Emitter, G D S D (TAB) Mounting torque (M3) 1.13/10 Nm/lb.in. 300 6 10 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-264 TO-268 C = Collector, TAB = Collector.
IXGT60N60 Key Features
- International standard package JEDEC TO-247 AD, TO-264, TO-268
- New generation HDMOSTM process
- Low VCE(sat) for minimum on-state conduction losses
- High current handling capability
- MOS Gate turn-on drive simplicity