IXGT72N60B3 Datasheet Text
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GenX3TM B3-Class IGBTs
Medium Speed low Vsat PT IGBTs 5-40 kHz Switching
IXGH72N60B3 IXGT72N60B3
VCES IC110 VCE(sat) tfi(typ)
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600V 72A 1.80V 90ns
TO-247 AD (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Mounting Torque (TO-247) 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 72 400 20 200 ICM = 240 @ VCE ≤ 600 540 -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 5 V V V V A A A A mJ A V W °C °C °C Nm/lb.in. °C °C g g G = Gate E = Emitter G E (TAB) C = Collector TAB = Collector TO-268 (IXGT) G C E (TAB)
Features z z z z
Optimized for Low Conduction and Switching Losses Square RBSOA Avalanche Rated International Standard Packages
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 60A, VGE = 15V, Note 1 TJ = 125°C 1.51 1.48 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 75 750 ±100 1.80 V V μA μA nA V V z z z z z z z z z z
High Power Density Low Gate Drive Requirement
Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
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DS99847A(02/09)
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IXGH72N60B3 IXGT72N60B3
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri...