IXGX50N60A2D1 Description
+150 °C °C °C 1.13/10 Nm/lb.in.
IXGX50N60A2D1 Key Features
- Low on-state voltage IGBT and
- High current handling capability
- MOS Gate turn-on for drive simplicity
IXGX50N60A2D1 is IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGX50N60AU1 | HiPerFAST IGBT |
| IXGX50N60AU1S | HiPerFAST IGBT |
| IXGX50N60C2D1 | High Speed IGBT |
| IXGX50N90B2D1 | HiPerFAST IGBT |
| IXGX120N60B | IGBT |
+150 °C °C °C 1.13/10 Nm/lb.in.