IXGX50N60AU1 - HiPerFAST IGBT

Features

l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l Hole-less TO-247 for clip mount High current capability High frequency IGBT and antiparallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

IXYS Corporation

Datasheet Details

Part number	IXGX50N60AU1
Manufacturer	IXYS Corporation
File Size	323.56 KB
Description	HiPerFAST IGBT
Datasheet	IXGX50N60AU1 Datasheet
Additional preview pages of the IXGX50N60AU1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary data HiPerFASTTM IGBT with Diode Combi Pack IXGX50N60AU1 IXGX50N60AU1S VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C, limited by leads TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25 °C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 300 DataSheet4U.com -55 ... +150 150 -55 ...

Published: Jul 15, 2006 |