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IXGX50N60A2D1 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

Download the IXGX50N60A2D1 datasheet PDF. This datasheet also includes the IXGK50N60A2D1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXGK50N60A2D1-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 50 A 38 A 200 A ICM = 80 A TO-264 (IXGK) G C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C E C = Collector Tab = Collector (TAB) 400 W -55 ...

+150 150 -55 ...

+150 °C °C °C 1.13/10 Nm/lb.in.

Key Features

  • Low on-state voltage IGBT and anti-parallel diode in one package.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.

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