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IXKC13N80C - CoolMOS Power MOSFET

Features

  • Conditions TVJ = 25°C Maximum Ratings 800 V.
  • Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A.
  • 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.4 A 670 mJ - high blocking capability TJ start = 25°C; repetitive; ID = 17 A 0.5 mJ - lowest resistance VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs 6 V/ns t Condi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D G S ID25 = 13 A VDSS = 800 V RDS(on) max = 290 mΩ ISOPLUS220™ G D S E72873 • isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf RthJC Features Conditions TVJ = 25°C Maximum Ratings 800 V • Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A • 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.
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