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IXSX50N60AU1 - IGBT

Features

  • l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l Hole-less TO-247 package for clip mounting High current rating Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package Low V CE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) mi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Preliminary data IGBT with Diode Combi Pack Short Circuit SOA Capability VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE(sat) = 2.7 V TO-247 Hole-less SMD (50N60AU1S) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150 °C; RGE = 1 MΩ Continuous Transient TC = 25° C, limited by leads TC = 90° C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, R G = 22 Ω Clamped inductive load, L = 30 µH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25° C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ...
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