Datasheet Summary
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Preliminary data
IGBT with Diode bi Pack Short Circuit SOA Capability
VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE(sat) = 2.7 V
TO-247 Hole-less SMD (50N60AU1S)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150 °C; RGE = 1 MΩ Continuous Transient TC = 25° C, limited by leads TC = 90° C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, R G = 22 Ω Clamped inductive load, L = 30 µH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25° C
Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 6 300 V V V V A A A A...