datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





IXYS Corporation
IXYS Corporation

IXTA152N085T Datasheet Preview

IXTA152N085T Datasheet

Power MOSFET

No Preview Available !

IXTA152N085T pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA152N085T
IXTP152N085T
VDSS =
ID25 =
RDS(on)
85
152
7.0
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 5
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
85 V
85 V
± 20
152
75
410
25
750
V
A
A
A
A
mJ
3 V/ns
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
25 µA
250 µA
5.8 7.0 m
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99532 (11/06)



IXYS Corporation
IXYS Corporation

IXTA152N085T Datasheet Preview

IXTA152N085T Datasheet

Power MOSFET

No Preview Available !

IXTA152N085T pdf
IXTA152N085T
IXTP152N085T
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
td(off) RG = 5 (External)
tf
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
RthCH
TO-220
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/µs
VR = 40 V, VGS = 0 V
Characteristic Values
Min. Typ. Max.
60 100
S
TO-263AA (IXTA) Outline
5500
720
150
pF
pF
pF
30 ns
50 ns
50 ns
Pins: 1 - Gate 2 - Drain
45 ns
3 - Source 4, TAB - Drain
114
30
35
0.50
nC
nC
nC
0.42 °C/W
°C/W
Characteristic Values
Min. Typ. Max.
152 A
410 A
1.0 V
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
7.11
9.65
8.13
9.65
6.86
2.54
10.29
8.13
BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380
.270
.100
.405
.320
BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
.018 .029
TO-220AB (IXTP) Outline
90 ns
Notes: 1. Pulse test, t 300 µs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2
6,710,405B2 6,759,692 7,063,975 B2
6,710,463
6771478 B2 7,071,537


Part Number IXTA152N085T
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
PDF Download
IXTA152N085T pdf
IXTA152N085T Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 IXTA152N085T Power MOSFET IXYS Corporation
IXYS Corporation
IXTA152N085T pdf
2 IXTA152N085T7 Power MOSFET IXYS Corporation
IXYS Corporation
IXTA152N085T7 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy