Datasheet Summary
..
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary Data Sheet
VDSS
ID25 3A 3A
RDS(on) 4.5 Ω 4.0 Ω
IXTA/IXTP 3N120 IXTA/IXTP 3N110
1200 V 1100 V
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 3N120 3N110 3N120 3N110
Maximum Ratings 1200 1100 1200 1100 ±20 ±30 3 12 3 20 700 5 150 -55 to +150 150 -55 to +150 V V V V
D (TAB)
TO-220 (IXTP)
V V A A A mJ mJ V/ns W °C...