IXTA3N120 Description
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to.
IXTA3N120 Key Features
- International Standard Packages
- High Voltage Package
- Fast Intrinsic Diode
- Avalanche Rated
- Molding Epoxies meet UL 94 V-0
- High Blocking Voltage
- Easy to Mount
- Space Savings
- High Power Density