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High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120
Symbol
VDSS VDGR VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1200
V
1200
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C
3 12
3 700
5 200 -55 ... +150 150 -55 ... +150
A A A mJ
V/ns W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-247 & TO-220)
1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5
g
3.0
g
6.
IXTA3N120 Datasheet
