IXTA3N120HV - High Voltage Power MOSFET

Datasheet Summary

Features

High Voltage Package.
Fast Intrinsic Diode.
Avalanche Rated.
Molding Epoxies meet UL 94 V-0 Flammability Classification.
High Blocking Voltage Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

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Datasheet Details

Part number	IXTA3N120HV
Manufacturer	IXYS
File Size	152.21 KB
Description	High Voltage Power MOSFET
Datasheet	IXTA3N120HV Datasheet
Additional preview pages of the IXTA3N120HV datasheet.

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Full PDF Text Transcription

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High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 1200 V 1200 V 20 V 30 V 3 A 12 A 3 A 700 mJ 5 V/ns 200 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 2.

Published: Mar 22, 2025 |