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IXTA3N120HV - High Voltage Power MOSFET

Key Features

  • High Voltage Package.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Molding Epoxies meet UL 94 V-0 Flammability Classification.
  • High Blocking Voltage Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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📁 Similar Datasheet

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IXTA3N120 Power MOSFET IXYS Corporation
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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA3N100D2 MOSFET
IXTA3N100D2HV Power MOSFET
IXTA3N100P MOSFET
IXTA3N150HV High Voltage Power MOSFET
IXTA3N60P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 1200 V 1200 V 20 V 30 V 3 A 12 A 3 A 700 mJ 5 V/ns 200 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 2.