IXTA3N120HV Description
High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous.
IXTA3N120HV Key Features
- High Voltage Package
- Fast Intrinsic Diode
- Avalanche Rated
- Molding Epoxies meet UL 94 V-0
- High Blocking Voltage
- Easy to Mount
- Space Savings
- High Power Density