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IXTA3N120, IXTA3N110 - Power MOSFET

IXTA3N120 Description

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM I.

IXTA3N120 Features

* International Standard Packages
* High Voltage Package
* Fast Intrinsic Diode
* Avalanche Rated
* Molding Epoxies meet UL 94 V-0 Flammability Classification
* High Blocking Voltage Advantages
* Easy to Mount
* Space Savings

IXTA3N120 Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS98844F(0515) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VD

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTA3N120, IXTA3N110. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTA3N120, IXTA3N110
Manufacturer
IXYS Corporation
File Size
175.61 KB
Datasheet
IXTA3N110_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTA3N120, IXTA3N110.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS Corporation
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