Full PDF Text Transcription for IXTH200N10T (Reference)
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IXTH200N10T. For precise diagrams, and layout, please refer to the original PDF.
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Co...
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SS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P Maximum Ratings 100 100 V V ± 30 V 200 A 75 A 500 A 40 A 1.5 J 550 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 °C °C °C °C °C Nm/lb.in. 6.0 g 5.
IXTH200N10T Datasheet
