Inchange Semiconductor IXTH200N10T
N-Channel MOSFET
| Part No. | IXTH200N10T |
|---|---|
| Datasheet | IXTH200N10T Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Source Voltage- : VDSS= 100V(Min)●Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max)
●Fast Switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switch-Mode and Resonant-Mode Power Supplies●DC-DC Converters
●AC and DC Motor Drives
●Robotics and Servo Controls
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Plused 500 A PD Total Dissipation @TC=25℃ 550 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.27 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH200N10T
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(...