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IXTH200N10T Datasheet PDF

IXYS IXTH200N10T

Power MOSFET

Part No. IXTH200N10T
Datasheet IXTH200N10T Download
Manufacturer
IXYS
Description Power MOSFET
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IXTH200N10T datasheet page 1 preview

MAXIMUM RATINGS

100 100 V V ± 30 V 200 A 75 A 500 A 40 A 1.5 J 550 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 °C °C °C °C °C Nm/lb.in. 6.0 g 5.5 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V ±200 nA 5 μA 250 μA 4.5 5.5 mΩ VDSS = ID25 = RDS(on) ≤ 100V 200A 5.5mΩ TO-247 (IXTH) G DS TO-3P (IXTQ) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain

FEATURES

International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density

APPLICATIONS

Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching

APPLICATIONS

© 2008 IXYS CORPORATION, All rights reserved DS99654A(10/08) Symbol Test Con...
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