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IXTH6N120 Datasheet, IXYS Corporation

IXTH6N120 mosfet equivalent, high voltage power mosfet.

IXTH6N120 Avg. rating / M : 1.0 rating-14

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IXTH6N120 Datasheet

Features and benefits

z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package induct.

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IXTH6N120 Page 1 IXTH6N120 Page 2 IXTH6N120 Page 3

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