IXTL2x220N075T
IXTL2x220N075T is Power MOSFET manufactured by IXYS.
Advance Technical Information
Trench MVTM Power MOSFETs mon-Gate Pair
N-Channel Enhancement Mode Avalanche Rated
75 V VDSS = ID25 = 2x120 A RDS(on) ≤ 5.5 m Ω
(Electrically Isolated Back Surface)
RG ISOPLUS i5-Pak TM (IXTL)
S Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C (bined die total = 240 A) Package Current Limit, RMS (bined die total = 150 A) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C
Maximum Ratings 75 75 ± 20 120 75 600 25 1.0 3 V V V A A A A J V/ns D S G
Isolated back surface
D = Drain
G = Gate S = Source
PD TJ TJM Tstg TL TSOLD VISOL FC Weight
150 -55 ... +175 175 -55 ... +175
W °C °C °C °C °C V N/lb. g Features
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, t = 1 minute, IISOL < 1 m A, RMS Mounting force
300 260 2500 20..120/4.5..25 9
Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 150°C
Characteristic Values Min. Typ. Max. 75 2.0 4.0 V V
± 200 n A 5 μA 250 μA 5.5 m Ω
VGS = 10 V, ID = 50 A, Notes 1, 2
All ratings and parametric values are per each MOSFET die unless otherwise specified.
© 2007 IXYS CORPORATION All rights reserved
DS99750(01/07)
Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 75 120 3 7700 VGS = 0 V,...
