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Advance Technical Information
TrenchMVTM Power MOSFETs Common-Gate Pair
N-Channel Enhancement Mode Avalanche Rated
IXTL2x220N075T
75 V VDSS = ID25 = 2x120 A RDS(on) ≤ 5.5 m Ω
D
(Electrically Isolated Back Surface)
D
RG
RG ISOPLUS i5-PakTM (IXTL)
S Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C (Combined die total = 240 A) Package Current Limit, RMS (Combined die total = 150 A) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C
G
S
Maximum Ratings 75 75 ± 20 120 75 600 25 1.0 3 V V V A A A A J V/ns D S G
Isolated back surface
S
D
D = Drain
G = Gate S = Source
PD TJ TJM Tstg TL TSOLD VISOL FC Weight
150 -55 ..
IXTL2x220N075T Datasheet
