Overview: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 55 110 7.0 V A mΩ Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 55 V 55 V ± 20
110 300
25 750
3 V
A A
A mJ
V/ns 1 7
Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 230
-55 ... +175 175
-55 ...
