Overview: TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA130N10T7 VDSS = ID25 =
RDS(on) ≤ 100V 130A 9.1mΩ Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL T
SOLD
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved Maximum Ratings 100 100 V V ± 20 V 130 A 120 A 350 A 65 A 400 mJ 360 W -55 ... +175 175
-55 ... +175
300 260
3 °C °C °C
°C °C
g Characteristic Values Min. Typ. Max.
100 V 2.5 4.5 V
±200 nA
5 μA 250 μA 9.1 mΩ TO-263 (7-lead) (IXTA..
