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IXTP05N100 - Power MOSFET

Download the IXTP05N100 datasheet PDF. This datasheet also covers the IXTA05N100 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Voltage Package (TO-263HV).
  • Fast Switching Times.
  • Avalanche Rated.
  • Rds(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA05N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP05N100 N-Channel MOSFET INCHANGE
IXTP05N100M N-Channel MOSFET IXYS
IXTP05N100M N-Channel MOSFET INCHANGE
IXTP02N120P Power MOSFET IXYS
IXTP06N120P Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP01N100D N-Channel MOSFET
IXTP02N50D High Voltage MOSFET
IXTP08N50D2 N-Channel MOSFET
IXTP10N60PM PolarHV Power MOSFET
IXTP110N055P PolarHT Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263 TO-263HV Maximum Ratings 1000 V 1000 V 30 V 40 V 750 mA 3 A 1 A 100 mJ 3 V/ns 40 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 2.5 g 2.
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