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IXTP05N100M - N-Channel MOSFET

Key Features

  • Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density © 2008 IXYS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Maximum Ratings 1000 V 1000 V ± 30 V ± 40 V 700 mA 3 A 1 A 100 mJ 3 V/ns 25 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2.