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High Voltage MOSFET IXTP05N100M
(Electrically Isolated Tab)
VDSS = ID25 =
RDS(on) ≤
1000V 700mA 17Ω
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
700
mA
3
A
1
A
100
mJ
3
V/ns
25
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2.
IXTP05N100M Datasheet
