IXTP05N100M
IXTP05N100M is N-Channel MOSFET manufactured by IXYS.
High Voltage MOSFET IXTP05N100M
(Electrically Isolated Tab)
VDSS = ID25 =
RDS(on) ≤
1000V 700mA 17Ω
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
Maximum Ratings
± 30
± 40
700 mA
100 mJ
V/ns
- 55 ... +150
°C
°C
- 55 ... +150
°C
°C
°C
1.13/10...
