IXTP05N100 Description
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M.
IXTP05N100 Key Features
- High Voltage Package (TO-263HV)
- Fast Switching Times
- Avalanche Rated
- Rds(on) HDMOSTM Process
- Rugged Polysilicon Gate Cell structure
- Extended FBSOA
- High Power Density
- Space Savings