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IXYS Corporation

IXTP1N100 Datasheet Preview

IXTP1N100 Datasheet

High Voltage MOSFET

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High Voltage
MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Advanced Technical Information
IXTA 1N100
IXTP 1N100
VDSS = 1000 V
I=
D25
=RDS(on)
1.5 A
11
Symbol
Test Conditions
VDSS
VDGR
V
GS
VGSM
ID25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
T
stg
Md
Weight
TC = 25°C
T
C
= 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 18
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
1000
±20
±30
1.5
6
V
V
V
V
A
A
1.5 A
6 mJ
200 mJ
3 V/ns
54 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
4g
300 °C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 25 µA
1000
2.5
V
4.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
VGS = 10 V, ID = 1.0A
Pulse test, t 300 µs, duty cycle d 2 %
11
TO-220AB (IXTP)
GDS
D (TAB)
TO-263 AA (IXTA)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Ÿ International standard packages
Ÿ High voltage, Low RDS (on) HDMOSTM
process
Ÿ Rugged polysilicon gate cell structure
Ÿ Fast switching times
Applications
Ÿ Switch-mode and resonant-mode
power supplies
Ÿ Flyback inverters
Ÿ DC choppers
Ÿ High frequency matching
Advantages
Ÿ Space savings
Ÿ High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98545A (11/99)
1-2




IXYS Corporation

IXTP1N100 Datasheet Preview

IXTP1N100 Datasheet

High Voltage MOSFET

No Preview Available !

IXTA 1N100
IXTP 1N100
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 1.0A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
RG = 18Ω, (External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
(IXTP)
0.8 1.5
S
480 pF
45 pF
15 pF
18 ns
19 ns
20 ns
18 ns
23 nC
4.5 nC
14 nC
2.3 K/W
0.50 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
V I = I , V = 0 V,
SD F S GS
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
1.5 A
6A
1.8 V
710 ns
TO-263 AA (IXTA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
7.11
9.65
8.13
9.65
6.86
2.54
10.29
8.13
BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380
.270
.100
.405
.320
BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
.018 .029
TO-220 AB (IXTP) Outline
© 2000 IXYS All rights reserved
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IXTP1N100
Description High Voltage MOSFET
Maker IXYS Corporation
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IXTP1N100 Datasheet PDF






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