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IXTP2N100 - Power MOSFET

Download the IXTP2N100 datasheet PDF. This datasheet also includes the IXTA2N100 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTA2N100-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V 2A 8A 2A 150 mJ 5 V/ns 100 W - 55 ...

+150 150 - 55 ...

+150 300 260 1.13 / 10 2.5 3.0 °C °C °C °C °C Nm/lb.in.

Key Features

  • z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP2N100 N-Channel MOSFET INCHANGE
INCHANGE Logo IXTP2N100P N-Channel MOSFET INCHANGE
IXYS Logo IXTP2N100P Power MOSFET IXYS

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